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ZXMN4A06K
Electrical characteristics (at T A = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Static
Drain-source breakdown
V (BR)DSS
40
V
I D =250 A, V GS =0V
voltage
Zero gate voltage drain current I DSS
1
A
V DS =40V, V GS =0V
Gate-body leakage
I GSS
100
nA
V GS =±20V, V DS =0V
Gate-source threshold voltage V GS(th)
1.0
V
I D =250 A, V DS = V GS
Static drain-source on-state
resistance (*)
R DS(on)
0.050
0.075
V GS =10V, I D =4.5A
V GS =4.5V, I D =3.2A
Forward transconductance (?)
g fs
11.5
S
V DS =15V,I D =4.5A
Dynamic (?)
Input capacitance
C iss
827
pF
Output capacitance
Reverse transfer capacitance
C oss
C rss
133
84
pF
pF
V DS =20 V, V GS =0V,
f=1MHz
Switching (?) (?)
Turn-on delay time
t d(on)
3.2
ns
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
t r
t d(off)
t f
Q g
Q gs
Q gd
3.8
23.3
10.9
17.1
2.41
3.4
ns
ns
ns
nC
nC
nC
V DD =20V, I D =1A
R G = 6.0 , V GS =10V
(refer to test circuit)
V DS =20V,V GS =10V,
I D =4.5A
(refer to test circuit)
Source-drain diode
Diode forward voltage (*)
V SD
0.83
0.95
V
T J =25°C, I S =4.5A,
V GS =0V
Reverse recovery time (?)
Reverse recovery charge (?)
t rr
Q rr
16
9
ns
nC
T J =25°C, I F =4A,
di/dt= 100A/ s
NOTES:
(*) Measured under pulsed conditions. Width
300 s. Duty cycle
2%.
(?) Switching characteristics are independent of operating junction temperature.
(?) For design aid only, not subject to production testing.
Issue 1 - March 2006
? Zetex Semiconductors plc 2005
4
www.zetex.com
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